TGA2239
GHz, 35 Watt GaN Power Amplifie
Key Features
· Frequency rangeGHz
· PSat: >45.5 dBm Pin = 21 dBm
· PAE: >Pin = 21 dBm
· Large signal gain: >24.5 dB
· Small signal gain: 29.5 dB
· Input return loss: >13 dB
· Output return loss: >7.5 dB
· Bias: Vd = 22 V, Idq = 900 mA, Vg = -2.7 V typical
· Process technology GaN-TQGaN15
· Chip dimensions: 5.0 x 6.65 x 0.10 mm
· Performance under CW operation
Qorvo's TGA2239 is a Ku-band, high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process. The TGA2239 operates fromGHz and provides a superior combination of power, gain and efficiency by achieving greater than 35 W of saturated output power with 24.5dB of large signal gain and greater than 32% power-added efficiency.
This superior performance provides system designers the flexibility to improve system performance while reducing size and cost.
The TGA2239 is fully matched to 50 ohms with integrated DC blocking capacitors on RF ports simplifying system integration. It is ideally suited for military and commercial Ku-band radar and satellite communication systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
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