TechnischeInformation/TechnicalInformationFS800R07A2E3 IGBT-ModulIGBT-Modulepreparedby:WJapprovedby:MMdateofpublication:revision:3.2IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValuesKollektor-Emitter-SperrspannungCollector-emittervoltage Tvj = 25°C VCES 650 VImplementierterKollektor-StromImplementedcollectorcurrent ICN 800 A
Kollektor-DauergleichstromContinuousDCcollectorcurrentTF = 75°C, Tvj max = 175°CTF = 25°C, Tvj max = 175°CIC nomIC550700A
A
PeriodischerKollektor-SpitzenstromRepetitivepeakcollectorcurrent tP = 1 ms ICRM 1600 A
Gesamt-VerlustleistungTotalpowerdissipation TF = 25°C, Tvj max = 175°C Ptot 1500 WGate-Emitter-SpitzenspannungGate-emitterpeakvoltage VGES +/-20 VCharakteristischeWerte/CharacteristicValues min. typ. max.Kollektor-Emitter-SättigungsspannungCollector-emittersaturationvoltageIC = 550 A, VGE = 15 VIC = 550 A, VGE = 15 VIC = 550 A, VGE = 15 VVCE sat,60 VVVTvj = 25°CTvj = 125°CTvj = 150°CGate-SchwellenspannungGatethresholdvoltage IC = 13,0 mA, VCE = VGE, Tvj = 25°C VGEth50 VGateladungGatecharge VGE = -15 V ... +15 V QG 8,60 µCInternerGatewiderstandInternalgateresistor Tvj = 25°C RGintEingangskapazitätInputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 52,0 nFRückwirkungskapazitätReversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,50 nFKollektor-Emitter-ReststromCollector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA
Gate-Emitter-ReststromGate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
Einschaltverzögerungszeit,induktiveLastTurn-ondelaytime,inductiveloadIC = 550 A, VCE = 300 VVGE = ±15 VRGon =td onmicro;sµsµsTvj = 25°CTvj = 125°CTvj = 150°CAnstiegszeit,induktiveLastRisetime,inductiveloadIC = 550 A, VCE = 300 VVGE = ±15 VRGon =tr
micro;sµsµsTvj = 25°CTvj = 125°CTvj = 150°CAbschaltverzögerungszeit,induktiveLastTurn-offdelaytime,inductiveloadIC = 550 A, VCE = 300 VVGE = ±15 VRGoff =td off
micro;sµsµsTvj = 25°CTvj = 125°CTvj = 150°CFallzeit,induktiveLastFalltime,inductiveloadIC = 550 A, VCE = 300 VVGE = ±15 VRGoff =tf
micro;sµsµsTvj = 25°CTvj = 125°CTvj = 150°CEinschaltverlustenergieproPulsTurn-onenergylossperpulseIC = 550 A, VCE = 300 V, LS = 20 nHVGE = ±15 V, di/dt = 5500 A/µs (Tvj = 150°C)RGon =EonmJmJmJTvj = 25°CTvj = 125°CTvj = 150°CAbschaltverlustenergieproPulsTurn-offenergylossperpulseIC = 550 A, VCE = 300 V, LS = 20 nHVGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)RGoff =Eoff
mJmJmJTvj = 25°CTvj = 125°CTvj = 150°CKurzschlußverhaltenSCdataVGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISCA
A
Tvj = 25°CTvj = 150°CtP ≤ 8 µs,
tP ≤ 6 µs,
Wärmewiderstand,ChipbisKühl-FlüssigkeitThermalresistance,junctiontocoolingfluiproIGBT/perIGBTcoolingfluid=50%water/50%ethylenglycol;∆Vt=10,0dm³/minRthJF 0,10 K/WTemperaturimSchaltbetriebTemperatureunderswitchingconditionTvj opdeg;C
