随着技术发展,第三代半导体功率器件开始由实验室阶段步入商业应用,未来应用潜力巨大。通常这些新型器件测试要求更高的电压和功率水平,更快的开关时间。广电计量积极布局第三代半导体功率器件的测试业务,引进国际先进的测试技术,为功率半导体产业上下游企业提供器件参数检测服务,助力器件国产化、高新化发展。
测试周期:
根据标准、试验条件及被测样品量确定
服务内容:
覆盖MIL-STD-750,IEC 60747系列,GB/T29332等标准;服务内容包括:静态参数,动态参数,热特性,雪崩耐量,短路特性及绝缘耐压测试;设备支持0-1500A,0-3000V的器件参数检测。
产品范围:
MOSFET、IGBT、DIODE、BJT,第三代半导体器件等分立器件,以及上述元件构成的功率模块
静态参数:
Drain to Source Breakdown Voltage,Drain Leakage Current,Gate Leakage Current,Gate Threshold Voltage,Drain to Source On Resistance,Drain to Source On Voltage,Body Diode Forward Voltage,Internal Gate Resistance,Input capacitance,Output capacitance,Reverse transfer capacitance,Transconductance,Gate to Source Plateau Voltage
动态参数:
Turn-on delay time,Rise time,Turn-off delay time,Fall time,Turn-on energy,Turn-off energy,Diode reverse recovery time,Diode reverse recovery charge,Diode peak reverse recovery current,Diode peak rate of fall of reverse recovery current,Total gate charge,Gate-Emitter charge,Gate-Collector charge
其他参数:
thermal resistance,Unclamped Inductive Switching,Reverse biased safe operating area,Short circuit safe operation area