无线充MOS找至为芯科技无线充电器专用MOS
场管效应 MOSFET AGM306MAP(无线充MOS)
General Deion
The AGM306MAP combines advanced trench
MOSFET technology with a low resistance
package to provide extremely low RDS(ON) . This
device is ideal for load switch and battery
protection applications.
Features
Advance high cell density Trench technology
Low RDS(ON) to minimize conductive loss
Low Gate Charge for fast switching
Low Thermal resistance
Application
MB/VGA Vcore
SMPS 2nd Synchronous Rectifier
POL application
BLDC Motor driver
