Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability Application Power switching application Hard switched and high frequency circuits Uninterruptible Power Supply
Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 33 - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.6 3 V VGS=10V, ID=25A - 8 11 Drain-Source On-State Resistance RDS(ON) VGS=5V, ID=20A - 10 16 mΩ Forward Transconductance gFS VDS=5V,ID=20A 15 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 2000 - PF Output Capacitance Coss - 280 - PF Reverse Transfer Capacitance Crss VDS=15V,VGS=0V, F=1.0MHz - 160 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 10 - nS Turn-on Rise Time tr - 8 - nS Turn-Off Delay Time td(off) - 30 - nS Turn-Off Fall Time tf VDD=15V,ID=20A VGS=10V,RGEN=1.8Ω - 5 - nS Total Gate Charge Qg - 23 - nC Gate-Source Charge Qgs - 7 - nC Gate-Drain Charge Qgd VDS=10V,ID=25A, VGS=10V - 4.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=25A - 0.85 1.2 V Diode Forward Current (Note 2) IS - - 50 A Reverse Recovery Time trr - 22 35 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 50A di/dt = 100A/μs(Note3) - 11 18 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
深圳市华钻电子有限公司成立于2004年，位于广东省深圳市，同时还分别下设有中山、宁波和西安分公司，是一家代理及分销国内外各大品牌电元器件的电子科技公司，具有丰富的电子行业经验，所供应的产品应用于LED照明，LED显示，LED电源，LED模组，通讯，无线充电及航天航空电子产品领域。
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