Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ) RDS(ON) < 85mΩ @ VGS=4.5V (Typ:65mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply
Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 17 A Drain Current-Continuous(TC=100℃) ID (100℃) 12 A Pulsed Drain Current IDM 60 A Maximum Power Dissipation PD 55 W Single pulse avalanche energy (Note 5) EAS 250 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
