General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features Optimized body diode reverse recovery performance Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correction（PFC） Switched mode power supplies(SMPS) Uninterruptible Power Supply（UPS） LLC Half-bridge
Parameter Symbol NCE65TF180 NCE65TF180D NCE65TF180F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V), AC (f>1 Hz) VGS ±30 V Continuous Drain Current at TC=25°C ID (DC) 21 21* A Continuous Drain Current at TC=100°C ID (DC) 13.2 13.2* A Pulsed drain current (Note 1) IDM (pluse) 84 84* A Maximum Power Dissipation(TC=25℃) Derate above 25°C PD 188 1.5 33.8 0.27 W W/°C Single pulse avalanche energy (Note 2) EAS 441 mJ Avalanche current(Note 1) IAR 10.5 A Repetitive Avalanche energy ，tAR limited by TJmax (Note 1) EAR 0.7 mJ
