无线充同步MOS找至为芯科技AGM311MAP
AGM311MAP is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
AGM311MAP是一种高单元密度的N-ch MOSFET，为大多数同步BUCK变换器的应用提供了优良的RDSON和栅极电荷。
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
100%EAS保证
绿色设备可
超低门充电，
优良的CdV/dt效应下降
先进的高电池密度沟槽技术
PDFN3.3X3.3 Pin Configuration
