至为芯 MOSFET PD快充协议VbusMOS--AGM306AP1 DFN3*3 21+
Deion
AGM306AP1 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
