至为芯科技PD同步整流MOS—AGM085N10D
General Deion
The AGM085N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
Advance high cell density Trench technology
Low RDS(ON) to minimize conductive loss
Low Gate Charge for fast switching
Low Thermal resistance
Application
MB/VGA Vcore
SMPS 2nd Synchronous Rectifier
POL application
BLDC Motor driver
Product Summary
BVDSS:100V
RDSON:8.0毫欧
ID :70A
